stn 2610 d n channel enhancement mode mosfet 50 .0 a stanson technology 120 bentley s quare, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. stn 2610 d 2 009. v1 description stn 2610 d is used trench technology to provide excellent rds(on) and gate charge. those devices are suitable for use as load switch or in pwm applications . pin configuration to - 252 to - 251 part marking y year code a process code b process code feature l 6 0v/ 1 0 .0 a, r ds(on) = 10 m (typ.) @v gs = 10v l 6 0v/ 8 .0 a, r ds(on) = 12 m @v gs = 4.5 v l super high density cell design for extremely low r ds(on) l exceptional on - resistance and maximum dc current capability l t o - 252 , to - 251 package design
stn 2610 d n channel enhancement mode mosfet 50 .0 a stanson technology 120 bentley s quare, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. stn 2610 d 2 009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage vdss 6 0 v gate - source voltage vgss ?0 v continuous drain current (tj=150 ) ta=25 t a=70 id 50 .0 28 .0 a pulsed drain current idm 18 0 a continuous source current (diode conduction) is 36 a power dissipation ta=25 ta=70 pd 63 0.5 w operation junction temperature tj 1 75 storgae temperature range tstg - 55/1 5 5 thermal resistance - junction to ambient r ja 62 /w
stn 2610 d n channel enhancement mode mosfet 50 .0 a stanson technology 120 bentley s quare, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. stn 2610 d 2 009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,id= 250 m a 6 0 v gate threshold voltage v gs(th) v ds =v gs ,id= 2 50ua 1 2.5 v gate leakage current i gss v ds =0v,v gs =?0v 100 na zero gate voltage drain current i dss v ds = 48 v,v gs =0v 1 ua v ds = 48 v,v gs =0v t j = 5 5 5 drain - source on - resistance r ds(on) v gs =10v,i d = 20 a v gs = 4.5 v,i d = 20 a 10 1 2 12 14 m forward transconductance gfs v ds =5v,i d = 20 a 12 s diode forward voltage v sd i s = 1 .0 a,v gs =0v 1. 0 v dynamic total gate charge q g v g s = 10 v,v ds = 3 0 v i d 1 0 a 40 59 nc gate - source charge q gs 5 .9 9 gate - drain charge q gd 8.8 14 input capacitance c iss v ds = 25 v,vgs=0v f=1mhz 210 0 3050 pf output capacitance c oss 165 240 reverse transfer c apacitance c rss 80 120 turn - on time t d(on) tr v d d = 15 v,r g = 6 v g s =10v , i d = 1a 9 18 ns 29 54 turn - off time t d(off) tf 45.3 8 6 11 21
stn 2610 d n channel enhancement mode mosfet 50 .0 a stanson technology 120 bentley s quare, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. stn 2610 d 2 009. v1 typical characterictics
stn 2610 d n channel enhancement mode mosfet 50 .0 a stanson technology 120 bentley s quare, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. stn 2610 d 2 009. v1 typical characterictics
stn 2610 d n channel enhancement mode mosfet 50 .0 a stanson technology 120 bentley s quare, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. stn 2610 d 2 009. v1 typical characterictics
stn 2610 d n channel enhancement mode mosfet 50 .0 a stanson technology 120 bentley s quare, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. stn 2610 d 2 009. v1 to - 252 - 2l pa ckage outline
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